Spatial distribution of electron in doped films

Abstract

We have analysed the changes induced by the doping of Fermi-electron density in films. Two types of doping were studied: sputtering and vaporization and it was concluded that it is easier to move the maximal density towards the boundary surface by vaporization. For this reason, vaporization is a more perspective method for the current delocalization in new high-temperature superconductors. © 1994.