Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/12273
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tošić B. | en |
dc.contributor.author | Mašković L. | en |
dc.contributor.author | Maksimović, Rado | en |
dc.date.accessioned | 2020-03-03T14:47:49Z | - |
dc.date.available | 2020-03-03T14:47:49Z | - |
dc.date.issued | 1994-11-15 | en |
dc.identifier.issn | 3784371 | en |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/12273 | - |
dc.description.abstract | We have analysed the changes induced by the doping of Fermi-electron density in films. Two types of doping were studied: sputtering and vaporization and it was concluded that it is easier to move the maximal density towards the boundary surface by vaporization. For this reason, vaporization is a more perspective method for the current delocalization in new high-temperature superconductors. © 1994. | en |
dc.relation.ispartof | Physica A: Statistical Mechanics and its Applications | en |
dc.title | Spatial distribution of electron in doped films | en |
dc.type | Journal/Magazine Article | en |
dc.identifier.doi | 10.1016/0378-4371(94)00137-5 | en |
dc.identifier.scopus | 2-s2.0-11744342751 | en |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/11744342751 | en |
dc.relation.lastpage | 488 | en |
dc.relation.firstpage | 475 | en |
dc.relation.issue | 4 | en |
dc.relation.volume | 211 | en |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
Appears in Collections: | FTN Publikacije/Publications |
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