Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/12273
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dc.contributor.authorTošić B.en
dc.contributor.authorMašković L.en
dc.contributor.authorMaksimović, Radoen
dc.date.accessioned2020-03-03T14:47:49Z-
dc.date.available2020-03-03T14:47:49Z-
dc.date.issued1994-11-15en
dc.identifier.issn3784371en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/12273-
dc.description.abstractWe have analysed the changes induced by the doping of Fermi-electron density in films. Two types of doping were studied: sputtering and vaporization and it was concluded that it is easier to move the maximal density towards the boundary surface by vaporization. For this reason, vaporization is a more perspective method for the current delocalization in new high-temperature superconductors. © 1994.en
dc.relation.ispartofPhysica A: Statistical Mechanics and its Applicationsen
dc.titleSpatial distribution of electron in doped filmsen
dc.typeJournal/Magazine Articleen
dc.identifier.doi10.1016/0378-4371(94)00137-5en
dc.identifier.scopus2-s2.0-11744342751en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/11744342751en
dc.relation.lastpage488en
dc.relation.firstpage475en
dc.relation.issue4en
dc.relation.volume211en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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