Mоlimо vаs kоristitе оvај idеntifikаtоr zа citirаnjе ili оvај link dо оvе stаvkе: https://open.uns.ac.rs/handle/123456789/2906
Nаziv: Conduction Mechanisms in Multiferroic Multilayer BaTiO3/NiFe2O4/BaTiO3 Memristors
Аutоri: Samardžić, Nataša 
Bajac, Branimir 
Srdić, Vladimir 
Stojanović, Goran 
Dаtum izdаvаnjа: 2017
Izdаvаč: Springer Link
Čаsоpis: Journal of Electronic Materials
Sažetak: © 2017, The Minerals, Metals & Materials Society. Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/BaTiO3thin films, fabricated by a spin-coating deposition technique on platinized Si wafers. This cost-effective device shows symmetric and reproducible current–voltage characteristics for the actuating voltage amplitude of ±10 V. The origin of the conduction mechanism was investigated by measuring the electrical response in different voltage and temperature conditions. The results indicate the existence of two mechanisms: thermionic emission and Fowler–Nordheim tunnelling, which alternate with actuating voltage amplitude and operating temperature.
URI: https://open.uns.ac.rs/handle/123456789/2906
ISSN: 3615235
DOI: 10.1007/s11664-017-5618-2
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