Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/2906
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Samardžić, Nataša | en_US |
dc.contributor.author | Bajac, Branimir | en_US |
dc.contributor.author | Srdić, Vladimir | en_US |
dc.contributor.author | Stojanović, Goran | en_US |
dc.date.accessioned | 2019-09-23T10:24:31Z | - |
dc.date.available | 2019-09-23T10:24:31Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 3615235 | en_US |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/2906 | - |
dc.description.abstract | © 2017, The Minerals, Metals & Materials Society. Memristive devices and materials are extensively studied as they offer diverse properties and applications in digital, analog and bio-inspired circuits. In this paper, we present an important class of memristors, multiferroic memristors, which are composed of multiferroic multilayer BaTiO3/NiFe2O4/BaTiO3thin films, fabricated by a spin-coating deposition technique on platinized Si wafers. This cost-effective device shows symmetric and reproducible current–voltage characteristics for the actuating voltage amplitude of ±10 V. The origin of the conduction mechanism was investigated by measuring the electrical response in different voltage and temperature conditions. The results indicate the existence of two mechanisms: thermionic emission and Fowler–Nordheim tunnelling, which alternate with actuating voltage amplitude and operating temperature. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Link | en_US |
dc.relation.ispartof | Journal of Electronic Materials | en_US |
dc.title | Conduction Mechanisms in Multiferroic Multilayer BaTiO3/NiFe2O4/BaTiO3 Memristors | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.doi | 10.1007/s11664-017-5618-2 | - |
dc.identifier.scopus | 2-s2.0-85020260710 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85020260710 | - |
dc.description.version | Published | en_US |
dc.relation.lastpage | 5496 | en_US |
dc.relation.firstpage | 5492 | en_US |
dc.relation.issue | 10 | en_US |
dc.relation.volume | 46 | en_US |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
crisitem.author.dept | Fakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije | - |
crisitem.author.dept | Institut BioSense | - |
crisitem.author.dept | Tehnološki fakultet, Katedra za inženjerstvo materijala | - |
crisitem.author.dept | Fakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije | - |
crisitem.author.orcid | 0000-0002-0812-7650 | - |
crisitem.author.orcid | 0000-0003-2499-548X | - |
crisitem.author.orcid | 0000-0003-2098-189X | - |
crisitem.author.parentorg | Fakultet tehničkih nauka | - |
crisitem.author.parentorg | Univerzitet u Novom Sadu | - |
crisitem.author.parentorg | Tehnološki fakultet | - |
crisitem.author.parentorg | Fakultet tehničkih nauka | - |
Appears in Collections: | FTN Publikacije/Publications TF Publikacije/Publications |
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