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Nаziv: Influence of inner transistors working modes on DGMOSFET 1/f noise
Аutоri: Videnović-Mišić M.
Jevtić, Marija 
Dаtum izdаvаnjа: 19-сеп-2008
Čаsоpis: "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"
Sažetak: Influence of weighting factors |And1|2 and |A nd2|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime. © 2008 IEEE.
URI: https://open.uns.ac.rs/handle/123456789/15058
ISBN: 9781424418824
DOI: 10.1109/ICMEL.2008.4559346
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