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https://open.uns.ac.rs/handle/123456789/15058
Nаziv: | Influence of inner transistors working modes on DGMOSFET 1/f noise | Аutоri: | Videnović-Mišić M. Jevtić, Marija |
Dаtum izdаvаnjа: | 19-сеп-2008 | Čаsоpis: | "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008" | Sažetak: | Influence of weighting factors |And1|2 and |A nd2|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime. © 2008 IEEE. | URI: | https://open.uns.ac.rs/handle/123456789/15058 | ISBN: | 9781424418824 | DOI: | 10.1109/ICMEL.2008.4559346 |
Nаlаzi sе u kоlеkciјаmа: | MDF Publikacije/Publications |
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