Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/15058
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dc.contributor.authorVidenović-Mišić M.en
dc.contributor.authorJevtić, Marijaen
dc.date.accessioned2020-03-03T14:58:23Z-
dc.date.available2020-03-03T14:58:23Z-
dc.date.issued2008-09-19en
dc.identifier.isbn9781424418824en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/15058-
dc.description.abstractInfluence of weighting factors |And1|2 and |A nd2|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime. © 2008 IEEE.en
dc.relation.ispartof"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"en
dc.titleInfluence of inner transistors working modes on DGMOSFET 1/f noiseen
dc.typeConference Paperen
dc.identifier.doi10.1109/ICMEL.2008.4559346en
dc.identifier.scopus2-s2.0-51749118500en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/51749118500en
dc.relation.lastpage560en
dc.relation.firstpage557en
item.fulltextNo Fulltext-
item.grantfulltextnone-
crisitem.author.deptMedicinski fakultet, Katedra za higijenu-
crisitem.author.orcid0000-0002-1194-0765 -
crisitem.author.parentorgMedicinski fakultet-
Appears in Collections:MDF Publikacije/Publications
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