Influence of inner transistors working modes on DGMOSFET 1/f noise

Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/15058

Title:	Influence of inner transistors working modes on DGMOSFET 1/f noise
Authors:	Videnović-Mišić M. Jevtić, Marija
Issue Date:	19-Sep-2008
Journal:	"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"
Abstract:	Influence of weighting factors \|And1\|2 and \|A nd2\|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime. © 2008 IEEE.
URI:	https://open.uns.ac.rs/handle/123456789/15058
ISBN:	9781424418824
DOI:	10.1109/ICMEL.2008.4559346
Appears in Collections:	MDF Publikacije/Publications

24

Last Week
6

Last month
6

checked on May 10, 2024

Check