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https://open.uns.ac.rs/handle/123456789/13761
Nаziv: | New characterization technique for oxide degradation in power VDMOSFET based on split C-V measurements | Аutоri: | Mileusnic S. Habas P. Zivanov M. |
Dаtum izdаvаnjа: | 1-дец-1999 | Čаsоpis: | Proceedings of the International Semiconductor Conference, CAS | Sažetak: | For characterization of gate oxide degradation in irradiated VDMOSFETs various I-V and charge-pumping techniques are routinely used. Because of limitations of these methods and disagreements between their results, in this paper a new approach to characterize VDMOS transistors is proposed. The method is based on split C-V technique. The structure of the split C-V characteristics of a power VDMOSFET is studied by different experiments and numerical modeling, and explained. The impact of gate oxide and interface damage on the split C-V curves is analyzed. A technique for separate measurements of radiation-induced oxide damage in the channel region and in the epitaxial region is introduced. | URI: | https://open.uns.ac.rs/handle/123456789/13761 |
Nаlаzi sе u kоlеkciјаmа: | FTN Publikacije/Publications |
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prоvеrеnо 10.05.2024.
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