Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/13761
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mileusnic S. | en |
dc.contributor.author | Habas P. | en |
dc.contributor.author | Zivanov M. | en |
dc.date.accessioned | 2020-03-03T14:53:37Z | - |
dc.date.available | 2020-03-03T14:53:37Z | - |
dc.date.issued | 1999-12-01 | en |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/13761 | - |
dc.description.abstract | For characterization of gate oxide degradation in irradiated VDMOSFETs various I-V and charge-pumping techniques are routinely used. Because of limitations of these methods and disagreements between their results, in this paper a new approach to characterize VDMOS transistors is proposed. The method is based on split C-V technique. The structure of the split C-V characteristics of a power VDMOSFET is studied by different experiments and numerical modeling, and explained. The impact of gate oxide and interface damage on the split C-V curves is analyzed. A technique for separate measurements of radiation-induced oxide damage in the channel region and in the epitaxial region is introduced. | en |
dc.relation.ispartof | Proceedings of the International Semiconductor Conference, CAS | en |
dc.title | New characterization technique for oxide degradation in power VDMOSFET based on split C-V measurements | en |
dc.type | Journal/Magazine Article | en |
dc.identifier.scopus | 2-s2.0-0033354088 | en |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/0033354088 | en |
dc.relation.lastpage | 168 | en |
dc.relation.firstpage | 165 | en |
dc.relation.volume | 1 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | FTN Publikacije/Publications |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.