Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/11756
Title: Basic figures of merit for a 1.575 GHz low noise amplifier in 0.35 μm SiGe BiCMOS technology
Authors: Đugova, Alena 
Videnović-Misić, Mirjana
Issue Date: 23-Nov-2009
Journal: IEEE EUROCON 2009, EUROCON 2009
Abstract: A design of 1.575 GHz two-stage low noise amplifier (LNA) in a BiCMOS 0.35 μm process is presented. First LNA stage is common source amplifier in cascode configuration with source degeneration set for input matching. Additional stage is introduced in order to increase S21 of the LNA. Simulation results for S11, S12, S21 and S22, together with NF, Kf and B1f are given for presented LNA topology. © 2009 IEEE.
URI: https://open.uns.ac.rs/handle/123456789/11756
ISBN: 9781424438617
DOI: 10.1109/EURCON.2009.5167792
Appears in Collections:FTN Publikacije/Publications

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