Basic figures of merit for a 1.575 GHz low noise amplifier in 0.35 μm SiGe BiCMOS technology

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Назив:	Basic figures of merit for a 1.575 GHz low noise amplifier in 0.35 μm SiGe BiCMOS technology
Аутори:	Đugova, Alena Videnović-Misić, Mirjana
Датум издавања:	23-нов-2009
Часопис:	IEEE EUROCON 2009, EUROCON 2009
Сажетак:	A design of 1.575 GHz two-stage low noise amplifier (LNA) in a BiCMOS 0.35 μm process is presented. First LNA stage is common source amplifier in cascode configuration with source degeneration set for input matching. Additional stage is introduced in order to increase S21 of the LNA. Simulation results for S11, S12, S21 and S22, together with NF, Kf and B1f are given for presented LNA topology. © 2009 IEEE.
URI:	https://open.uns.ac.rs/handle/123456789/11756
ISBN:	9781424438617
DOI:	10.1109/EURCON.2009.5167792
Налази се у колекцијама:	FTN Publikacije/Publications