Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/11756
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dc.contributor.authorĐugova, Alenaen_US
dc.contributor.authorVidenović-Misić, Mirjanaen_US
dc.date.accessioned2020-03-03T14:45:42Z-
dc.date.available2020-03-03T14:45:42Z-
dc.date.issued2009-11-23-
dc.identifier.isbn9781424438617en_US
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/11756-
dc.description.abstractA design of 1.575 GHz two-stage low noise amplifier (LNA) in a BiCMOS 0.35 μm process is presented. First LNA stage is common source amplifier in cascode configuration with source degeneration set for input matching. Additional stage is introduced in order to increase S21 of the LNA. Simulation results for S11, S12, S21 and S22, together with NF, Kf and B1f are given for presented LNA topology. © 2009 IEEE.en
dc.relation.ispartofIEEE EUROCON 2009, EUROCON 2009en
dc.titleBasic figures of merit for a 1.575 GHz low noise amplifier in 0.35 μm SiGe BiCMOS technologyen_US
dc.typeConference Paperen_US
dc.identifier.doi10.1109/EURCON.2009.5167792-
dc.identifier.scopus2-s2.0-70449659150-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/70449659150-
dc.description.versionUnknownen_US
dc.relation.lastpage1230en
dc.relation.firstpage1225en
item.grantfulltextnone-
item.fulltextNo Fulltext-
crisitem.author.deptFakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije-
crisitem.author.parentorgFakultet tehničkih nauka-
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