Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/4794
Title: Performance analysis of resistive switching devices based on BaTiO3 thin films
Authors: Samardžić, Nataša 
Kojić, Tijana
Vukmirović, Jelena 
Tripković, Đorđije
Bajac, Branimir 
Srdić, Vladimir 
Stojanović, Goran 
Issue Date: 18-Mar-2016
Journal: IOP Conference Series: Materials Science and Engineering
Conference: 5th International Conference on Materials and Applications for Sensors and Transducers (IC-MAST2015) 27–30 September 2015, Mykonos, Greece
Abstract: © Published under licence by IOP Publishing Ltd. Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of 100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.
URI: https://open.uns.ac.rs/handle/123456789/4794
ISSN: 17578981
DOI: 10.1088/1757-899X/108/1/012046
Appears in Collections:FTN Publikacije/Publications
IBS Publikacije/Publications
TF Publikacije/Publications

Show full item record

SCOPUSTM   
Citations

2
checked on May 3, 2024

Page view(s)

45
Last Week
14
Last month
1
checked on May 10, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.