Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/3196
Title: Design and characterization of a 130 nm CMOS ultra-wideband low-noise amplifier
Authors: Pajkanović A.
Videnović-Misić M.
Stojanović, Goran 
Issue Date: 1-Jun-2017
Journal: Informacije MIDEM
Abstract: © MIDEM Society. The design of an ultra-wideband low noise amplifier is presented in this paper. Schematic level design is described, as well as integrated circuit layout techniques applied and post-layout simulation results. After fabrication using the standard 130 nm CMOS process node, on-chip characterization has been performed. The simulation and characterization results are presented analyzed and discussed in detail.
URI: https://open.uns.ac.rs/handle/123456789/3196
ISSN: 3529045
Appears in Collections:FTN Publikacije/Publications

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