Photoresistive switching of multiferroic thin film memristors

Abstract

© 2017 Elsevier B.V. Activation and changes in the memristive switching behaviour with photon signals are becoming especially attractive due to advantages of photon signal in comparison with electrical signal, which can significantly expand possible applications of the memristors. In this paper, we present electrical response of multiferroic thin film memristor of structure Pt/BaTiO3/NiFe2O4/BaTiO3/Au, under various illumination conditions. Results indicate that combining photonic and electronic excitation qualifies multiferroic memristor as an appropriate candidate for UV sensing application, while it can also provide multilevel switching operation.