Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/16303
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dc.contributor.authorKristina Nikolićen_US
dc.contributor.authorJelena Radićen_US
dc.date.accessioned2020-06-10T16:28:27Z-
dc.date.available2020-06-10T16:28:27Z-
dc.date.issued2020-06-06-
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/16303-
dc.description.abstractIn this paper, a tunable bandwidth 6th-order active Butterworth low-pass filter has been designed in 0.18 um UMC CMOS technology. The topology consists of three second-order filters designed by using the Sallen-Key topology. The standard two-stage operation amplifier with Miller compensation capacitor is utilized as an operation amplifier stage in 2nd-order Butterworth low-pass filter. The cutoff frequency (3dB bandwidth) can be adjusted from 22 kHz to 52 kHz with a step value of 10 kHz by using a programmable capacitor bank. The post-layout simulation results show that for each cutoff frequency value, the designed tunable low-pass filter has a maximum passband attenuation of 11.53 mdB and a minimum stopband attenuation of 50 dB. The power consumption of designed active filter is 2.24 mW for a 1.8 V power supply. It achieves an in-band integrated input-referred noise of 130.502 uVrms and occupies active area of 0.65 mm2en_US
dc.description.sponsorshipEuropean Commissionen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relationH2020 STRENTEXen_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.subjectCMOS technology, low-pass filter, operational amplifier, RC-active filter, tunable bandwidthen_US
dc.titleA tunable bandwidth 6th-order active low-pass filter in 0.18 um CMOS technologyen_US
dc.typeConference Paperen_US
dc.relation.conference23rd IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS’2020)en_US
dc.identifier.doi10.1109/DDECS50862.2020.9095683-
dc.description.versionAccepted for publishingen_US
dc.relation.volume22-24 April 2020en_US
item.grantfulltextopen-
item.fulltextWith Fulltext-
crisitem.author.deptDepartman za energetiku, elektroniku i telekomunikacije-
crisitem.author.parentorgFakultet tehničkih nauka-
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