Determination of electron mobility in heavily doped n-type GaAs using kp-model

Abstract

The transport characteristics of heavily doped n-type GaAs was calculated for doping concentrations from 1017 to 1020 cm-3. The nonparabolic energy dispersion according to the kp model was taken into account. Detailed physical model with all important scattering mechanisms was included. The iterative method was used for determination the drift and Hall electron mobilities. Very good agreement between calculated results and available experimental data was obtained. Approximate relation for electron mobility was given, which may be used for simulation.