Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/12957
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dc.contributor.authorZivanov M.en
dc.contributor.authorZivanov L.en
dc.date.accessioned2020-03-03T14:50:31Z-
dc.date.available2020-03-03T14:50:31Z-
dc.date.issued1995-12-01en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/12957-
dc.description.abstractThe transport characteristics of heavily doped n-type GaAs was calculated for doping concentrations from 1017 to 1020 cm-3. The nonparabolic energy dispersion according to the kp model was taken into account. Detailed physical model with all important scattering mechanisms was included. The iterative method was used for determination the drift and Hall electron mobilities. Very good agreement between calculated results and available experimental data was obtained. Approximate relation for electron mobility was given, which may be used for simulation.en
dc.relation.ispartofProceedings of the International Conference on Microelectronicsen
dc.titleDetermination of electron mobility in heavily doped n-type GaAs using kp-modelen
dc.typeConference Paperen
dc.identifier.scopus2-s2.0-0029515837en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/0029515837en
dc.relation.lastpage100en
dc.relation.firstpage95en
dc.relation.volume1en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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