Modelling and characterisation of fractal based RF inductors on silicon substrate

Abstract

This paper offers a new realisation of a lumped element model for the second order Hilbert type fractal inductor on silicon substrate. Modelled elements are derived and analytically determined from the inductors layout specifications and available materials parameters. Based on the presented concept, frequency dependent characteristics for fractals inductance and quality factor (Q-factor) can be anticipated easily and with acceptable tolerances. In order to verify the accuracy of the presented model obtained parameters have been compared with experimentally attained values. Determined model parameters show satisfactory compliance with electrical parameters attained through experimental measurement, for frequencies in lower RF range (up to 1 OGHz). © 2008 IEEE.