Analysis of electrical switching effects in the chalcogenide glassy semiconductor cu1(AsSe<inf>1.4</inf>i<inf>0.2</inf>)<inf>99</inf>

Abstract

The current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99 are obtained by Tektronix 576 Curve Tracer. It was found that this glass has current-controlled negative resistance (CCNR) and switching characteristic with memory. Experimental results have shown a strong decrease in electrical resistivity and threshold voltage due to the presence of the metallic element copper and change of ambient temperature. Also, photomicrographs of the sample surface are presented and the impact of electrical switching on forming crystalline conductive channels on the surface of the investigated amorphous semiconductor is discussed.