Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/9179
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dc.contributor.authorRadić, Jelenaen_US
dc.contributor.authorĐugova, Alenaen_US
dc.contributor.authorNađ, Lasloen_US
dc.contributor.authorVidenović-Mišić, Mirjanaen_US
dc.contributor.authorŽivanov, Ljiljanaen_US
dc.date.accessioned2019-09-30T09:14:01Z-
dc.date.available2019-09-30T09:14:01Z-
dc.date.issued2013-01-01-
dc.identifier.issn18684238en_US
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/9179-
dc.description.abstract© IFIP International Federation for Information Processing 2013 A CMOS three-stage ring oscillator is examined in UMC 0.13 μm and 0.18 μm technologies. The influence of PMOS transistor and resistor, as inverter feedbacks, on the ring oscillator frequency and the peak-to-peak amplitude is investigated in both technologies. Furthermore, as the ring oscillator usually drives a buffer in pulse generator/transmitter chain, dependence of its Figures of Merit on the buffer feedback is presented in the paper. Simulation results showed that the ring oscillator frequency is strongly dependent on the inverter feedback. The presented techniques can be used to increase (resistive feedback) and control (PMOS transistor feedback) the ring oscillator frequency. As the ring oscillator is a part of an IR-UWB (Impulse Radio Ultra Wide Band) pulse generator, its oscillating frequency determines the spectrum central frequency and has significant effect on spectrum fitting within UWB FCC mask.en
dc.relation.ispartofIFIP Advances in Information and Communication Technologyen
dc.titleComparison of feedback influence on ring oscillator performance for ir-uwb pulse generator in 0.13 μm and 0.18 μm cmos technologiesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.scopus2-s2.0-84886462879-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84886462879-
dc.description.versionUnknownen_US
dc.relation.lastpage610en
dc.relation.firstpage603en
dc.relation.volume394en
item.fulltextNo Fulltext-
item.grantfulltextnone-
crisitem.author.deptDepartman za energetiku, elektroniku i telekomunikacije-
crisitem.author.deptDepartman za energetiku, elektroniku i telekomunikacije-
crisitem.author.parentorgFakultet tehničkih nauka-
crisitem.author.parentorgFakultet tehničkih nauka-
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