Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/8253
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dc.contributor.authorGambuzza L.en
dc.contributor.authorSamardžić, Natašaen
dc.contributor.authorDautović, Stanišaen
dc.contributor.authorXibilia M.en
dc.contributor.authorGraziani S.en
dc.contributor.authorFortuna L.en
dc.contributor.authorStojanović, Goranen
dc.contributor.authorFrasca M.en
dc.date.accessioned2019-09-30T09:07:33Z-
dc.date.available2019-09-30T09:07:33Z-
dc.date.issued2013-01-01en
dc.identifier.isbn9786050105049en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/8253-
dc.description.abstractAfter the fabrication of several devices showing memristive switching behavior, recently a growing interest to the realization of dynamical nonlinear circuits based on memristors has been manifested. Currently, many memristor circuits have been mostly conceived on the basis of theoretical memristor models. However, in order to analyze the dynamical behavior of memristor circuits with real components and to implement them, the characteristics of the fabricated devices have to be included in the models used. To this aim, a compact data-driven model is proposed in this paper. The model is based on neural networks and is derived starting from experimental measurements performed on printed TiO2 memristors. © 2013 The Chamber of Turkish Electrical Engineers-Bursa.en
dc.relation.ispartofELECO 2013 - 8th International Conference on Electrical and Electronics Engineeringen
dc.titleA data driven model of TiO<inf>2</inf> printed memristorsen
dc.typeConference Paperen
dc.identifier.scopus2-s2.0-84894134309en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84894134309en
dc.relation.lastpage4en
dc.relation.firstpage1en
item.grantfulltextnone-
item.fulltextNo Fulltext-
crisitem.author.deptFakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije-
crisitem.author.orcid0000-0003-2098-189X-
crisitem.author.parentorgFakultet tehničkih nauka-
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