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https://open.uns.ac.rs/handle/123456789/8054
Поље DC-а | Вредност | Језик |
---|---|---|
dc.contributor.author | Djugova, Alena | en_US |
dc.contributor.author | Radić, Jelena | en_US |
dc.contributor.author | Videnović-Mišić, Mirjana | en_US |
dc.contributor.author | Nađ, Laslo | en_US |
dc.date.accessioned | 2019-09-30T09:06:17Z | - |
dc.date.available | 2019-09-30T09:06:17Z | - |
dc.date.issued | 2013-12-01 | - |
dc.identifier.isbn | 9789940943615 | en_US |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/8054 | - |
dc.description.abstract | In this paper two ultra-wideband (UWB) low noise amplifier (LNA) configurations in UMC 0.18μm CMOS technology are presented. Both amplifiers are based on a shunt-feedback inverter-configuration with inductive peaking. In first LNA topology inductor is placed at the input node of the inverter cell. In the frequency range from 3.1 GHz - 10.6 GHz, this amplifier achieves power gain (S21) of 12.23 dB, noise figure of 5.62 dB and input/output return loss of -8 dB/-11 dB, while consuming 9.61 mA from 1.8 V supply. In second LNA peaking inductor is applied at the gate of NMOS transistor in inverter stage. With this technique the -3 dB roll-off frequency is increased from 9 GHz, obtained with previous technique, to 11.11 GHz, without additional power consumption. Achieved power gain from 3.1 GHz - 10.6 GHz is 12.64 dB, noise figure is 4.04 dB and input/output return loss is -7 dB/-10 dB. This amplifier consumes 9.48 mA from the 1.8 V supply. © 2013 IEEE. | en |
dc.relation.ispartof | Proceedings - 2013 2nd Mediterranean Conference on Embedded Computing, MECO 2013 | en |
dc.title | Inverter-based low-noise amplifier topologies for ultra-wideband applications | en_US |
dc.type | Conference Paper | en_US |
dc.identifier.doi | 10.1109/MECO.2013.6601354 | - |
dc.identifier.scopus | 2-s2.0-84891446540 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/84891446540 | - |
dc.description.version | Unknown | en_US |
dc.relation.lastpage | 195 | en |
dc.relation.firstpage | 192 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
crisitem.author.dept | Departman za energetiku, elektroniku i telekomunikacije | - |
crisitem.author.parentorg | Fakultet tehničkih nauka | - |
Налази се у колекцијама: | FTN Publikacije/Publications |
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