Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/14717
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dc.contributor.authorStojanović, Goranen
dc.contributor.authorZivanov L.en
dc.date.accessioned2020-03-03T14:57:07Z-
dc.date.available2020-03-03T14:57:07Z-
dc.date.issued1999-01-01en
dc.identifier.isbn780352351en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/14717-
dc.description.abstractThis paper presents a simple lumped - element circuit model for analyzing quality factor (Q) dependence on temperature and impurity concentration. Q of monolithic spiral inductor has been determined over temperature range from -55 to 125°C for various frequencies and impurity concentrations. The effects of temperature and concentration in silicon substrate have been modeled and simulated with analytical expression for carrier mobility. The model that incorporated the temperature dependence of the inductor's parasitics was adopted from literature and shown to give good agreement with measured and published data.en
dc.relation.ispartof2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedingsen
dc.titleDetermination of quality factor dependence on temperature and impurity concentration in monolithic spiral inductoren
dc.typeConference Paperen
dc.identifier.scopus2-s2.0-0033300933en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/0033300933en
dc.relation.lastpage472en
dc.relation.firstpage469en
dc.relation.volume2en
item.grantfulltextnone-
item.fulltextNo Fulltext-
crisitem.author.deptFakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije-
crisitem.author.orcid0000-0003-2098-189X-
crisitem.author.parentorgFakultet tehničkih nauka-
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