Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/13493
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dc.contributor.authorRadić, Jelenaen_US
dc.contributor.authorĐugova, Alenaen_US
dc.contributor.authorNađ, Lasloen_US
dc.contributor.authorVidenović-Mišić, Mirjanaen_US
dc.date.accessioned2020-03-03T14:52:34Z-
dc.date.available2020-03-03T14:52:34Z-
dc.date.issued2012-07-30-
dc.identifier.isbn9781467302388en_US
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/13493-
dc.description.abstractA CMOS three-stage ring oscillator is examined in UMC 0.18m technology. The influence of resistor and PMOS transistor, as inverter feedbacks, on the ring oscillator frequency and the peak-to-peak amplitude is investigated. Simulation results showed that by varying the feedback transistor control voltage from 0 to V dd, the ring oscillating frequency can be controlled in the range of 1.46 GHz for the three PMOS transistor feedbacks topology, 0.86 GHz in the two feedbacks architecture, and 0.36 GHz (the best case) in the one feedback ring oscillator design. In the case of ring oscillator design with three resistive feedbacks, the working frequency is decreased from 5.6 GHz to 3.92 GHz, for the resistance changes from 0.5 k to 4 k. Moreover, the maximum frequency obtained in the latter case is significantly higher than 3.77 GHz achieved without any feedback. © 2012 IEEE.en
dc.relation.ispartof2012 28th International Conference on Microelectronics - Proceedings, MIEL 2012en
dc.titleFeedback influence on performance of ring oscillator for IR-UWB pulse generator in 0.18μm CMOS technologyen_US
dc.typeConference Paperen_US
dc.identifier.doi10.1109/MIEL.2012.6222873-
dc.identifier.scopus2-s2.0-84864275039-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84864275039-
dc.description.versionUnknownen_US
dc.relation.lastpage360en
dc.relation.firstpage357en
item.grantfulltextnone-
item.fulltextNo Fulltext-
crisitem.author.deptFakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije-
crisitem.author.deptFakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije-
crisitem.author.parentorgFakultet tehničkih nauka-
crisitem.author.parentorgFakultet tehničkih nauka-
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