The nonlinear transport regime of a T-shaped quantum interference transistor

Abstract

We present the current-voltage characteristics of a T-shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero-temperature I-V characteristics are with multiple peaks and exhibit regions of negative-differential resistance. The peak-to-valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor. © 1996 American Institute of Physics.