Characterization of novel varistor+inductor integrated passive devices

Abstract

This letter describes the design, modeling, simulation, and fabrication of novel integrated passive devices (IPDs). These IPDs, comprising of a cofired multilayered varistor and inductor, have been developed in the ceramic coprocessing technology. The equivalent model of the new structures is presented, suitable for design and circuit simulations. The fabrication method, new design of structures and patented materials of these devices lead to improved characteristics suitable for application in high-frequency suppressors. The IPDs were tested in the frequency range of 1 MHz-3 GHz using an Agilent 4287A RF LCR meter. The measurements confirm the validity of the proposed model. © 2004 IEEE.