Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/1253
Title: Power and Conjugately Matched High Band UWB Power Amplifier
Authors: Milićević M.
Milinković, Branislava
Grujić D.
Saranovac L.
Issue Date: 1-Oct-2018
Journal: IEEE Transactions on Circuits and Systems I: Regular Papers
Abstract: © 2004-2012 IEEE. A common source RF amplifier can be designed to be either power or conjugately matched at the output but not both, since the required load impedances are distinct. In this paper, we have shown that using a drain-gate feedback network brings the power and conjugate match impedances closer together, up to a point where they coincide at a cost of slightly decreased efficiency. We have thoroughly analyzed the output power, return loss, and efficiency tradeoffs and developed a complete design methodology. As a design example, a broadband feedback class-A amplifier has been designed and fabricated in a 130-nm RFCMOS process. The amplifier achieves 7-dBm peak output power and maximum power efficiency of about 20% in the frequency range from 6 to 9 GHz. Input and output return losses are better than 8.5 and 9.5 dB, respectively.
URI: https://open.uns.ac.rs/handle/123456789/1253
ISSN: 15498328
DOI: 10.1109/TCSI.2018.2815612
Appears in Collections:FTN Publikacije/Publications

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