Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/12515
Title: Photo-induced doping in a graphene field-effect transistor with inkjet-printed organic semiconducting molecules
Authors: Nekrasov, Nikita
Kireev, Dmitry
Omerović, Nejra 
Emelianov, Aleksei
Bobrinetskiy, Ivan 
Issue Date: Dec-2019
Journal: Nanomaterials
Abstract: © 2019 by the authors. Licensee MDPI, Basel, Switzerland. In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.
URI: https://open.uns.ac.rs/handle/123456789/12515
DOI: 10.3390/nano9121753
Appears in Collections:IBS Publikacije/Publications

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