Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/12288
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Vulanović R. | en |
dc.contributor.author | Teofanov, Ljiljana | en |
dc.date.accessioned | 2020-03-03T14:47:52Z | - |
dc.date.available | 2020-03-03T14:47:52Z | - |
dc.date.issued | 2010-01-01 | en |
dc.identifier.issn | 10171398 | en |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/12288 | - |
dc.description.abstract | Motivated by problems arising in semiconductor-device modeling, this paper is concerned with a singularly perturbed semilinear reaction-diffusion problem with a boundary turning point. It is proved that the problem has a unique solution with two boundary layers. Based on the estimates of the derivatives of the solution, a numerical method is proposed which uses the classical finite-difference discretization on a Bakhvalov-type mesh. Second-order accuracy, uniform with respect to the perturbation parameter, is proved in the maximum norm. Numerical results are presented in support of the theoretical ones. © 2009 Springer Science+Business Media, LLC. | en |
dc.relation.ispartof | Numerical Algorithms | en |
dc.title | A uniform numerical method for semilinear reaction-diffusion problems with a boundary turning point | en |
dc.type | Journal/Magazine Article | en |
dc.identifier.doi | 10.1007/s11075-009-9344-6 | en |
dc.identifier.scopus | 2-s2.0-77954455388 | en |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/77954455388 | en |
dc.relation.lastpage | 444 | en |
dc.relation.firstpage | 431 | en |
dc.relation.issue | 4 | en |
dc.relation.volume | 54 | en |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
crisitem.author.dept | Fakultet tehničkih nauka, Departman za opšte discipline u tehnici | - |
crisitem.author.parentorg | Fakultet tehničkih nauka | - |
Appears in Collections: | FTN Publikacije/Publications |
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