Study of the structural units in some amorphous semiconductors of the Cu-As-Se-I system by X-ray analysis

Abstract

The existence of the structural units was studied in the bulk Cux[AsSe1.4I0.2]100-x semiconducting glasses, with 0≤x≤25. X-ray powder diffraction at room temperature and temperatures up to 550 °C and differential thermal analysis studies of amorphous and some selected crystalline samples have been realized. On the basis of the obtained results, it was possible to identify the occurrence of structural units Cu3AsSe4 as well of number accompanying structural entities, elementary Se, AsSe, As2Se3, CuSe, Cu2-xSe, CuSe2, CuI, AsI3, α-AsSeI, oxides Cu2O and CuO, whose nature depends on the composition of the amorphous system and temperature of its treatment.