Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/11847
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Stojanović, Goran | en_US |
dc.contributor.author | Srdić, Vladimir | en_US |
dc.contributor.author | Milanović, Marija | en_US |
dc.date.accessioned | 2020-03-03T14:46:05Z | - |
dc.date.available | 2020-03-03T14:46:05Z | - |
dc.date.issued | 2008-10-01 | - |
dc.identifier.issn | 18626300 | en_US |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/11847 | - |
dc.description.abstract | Three types of zinc ferrite samples ZnFe 2-x Y xO 4 (x = 0, 0.3 and 0.6) and two of nickel-zinc ferrites Ni 0.5Zn 0.5Fe 2-xY xO 4 (x = 0 and 0.3) were prepared by a low-temperature chemical co-precipitation method in order to examine the influence of yttrium ions on the electrical properties of these nanostructured ferrites. Plots for the real and imaginary parts of the permittivity, tangent loss and resistivity of these samples were obtained as a function of frequency using capacitance measurements of an impedance analyser in the frequency range from 100 Hz to 40 MHz at room temperature. It is observed that with appropriate addition of yttrium ions, dielectric constant and dielectric loss tangent can be decreased and resistivity increased. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Wiley Online Library | en_US |
dc.relation.ispartof | Physica Status Solidi (A) Applications and Materials Science | en_US |
dc.title | Electrical properties of yttrium-doped Zn and Ni-Zn ferrites | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.doi | 10.1002/pssa.200723525 | - |
dc.identifier.scopus | 2-s2.0-54249151474 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/54249151474 | - |
dc.description.version | Published | en_US |
dc.relation.lastpage | 2468 | en_US |
dc.relation.firstpage | 2464 | en_US |
dc.relation.issue | 10 | en_US |
dc.relation.volume | 205 | en_US |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
crisitem.author.dept | Fakultet tehničkih nauka, Departman za energetiku, elektroniku i telekomunikacije | - |
crisitem.author.dept | Tehnološki fakultet, Katedra za inženjerstvo materijala | - |
crisitem.author.dept | Tehnološki fakultet, Katedra za inženjerstvo materijala | - |
crisitem.author.orcid | 0000-0003-2098-189X | - |
crisitem.author.orcid | 0000-0003-2499-548X | - |
crisitem.author.orcid | 0000-0002-7861-2408 | - |
crisitem.author.parentorg | Fakultet tehničkih nauka | - |
crisitem.author.parentorg | Tehnološki fakultet | - |
crisitem.author.parentorg | Tehnološki fakultet | - |
Appears in Collections: | FTN Publikacije/Publications TF Publikacije/Publications |
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