Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/6681
DC FieldValueLanguage
dc.contributor.authorStijepović, Ivanen_US
dc.contributor.authorĐenadić, Ružicaen_US
dc.contributor.authorSrdić, Vladimiren_US
dc.contributor.authorWinterer, Markusen_US
dc.date.accessioned2019-09-30T08:56:45Z-
dc.date.available2019-09-30T08:56:45Z-
dc.date.issued2015-11-
dc.identifier.issn09552219en_US
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/6681-
dc.description.abstract© 2015 Elsevier Ltd. Lanthanum-gallate nanoparticles have been prepared via chemical vapour synthesis (CVS) starting from metal acetylacetonates as solid precursors evaporated using a CO<inf>2</inf>-laser. The temperature in the CVS reactor has significant influence on crystallinity and phase composition of the as-synthesized particles. Higher temperatures (1100°C and 1300°C) result in nanocrystalline particles with monoclinic La<inf>4</inf>Ga<inf>2</inf>O<inf>9</inf> and trigonal La<inf>2</inf>O<inf>3</inf> as main phases due to gallium-oxide sublimation in the reactor. Lower temperatures (800°C and 900°C) limit evaporation, inhibit crystallization and yield amorphous particles. At 800°C the volatility of Ga<inf>2</inf>O<inf>3</inf> is low enough to generate nanoparticles containing an almost stoichiometric ratio of gallium to lanthanum of 1:1. Subsequent calcination is required to remove organic residues, however, the nanoscaled structure of the particles is preserved. Ceramics of lanthanum gallium oxide obtained by sintering CVS particles contain closed pores after sintering at 1300°C and a microstructure with close to theoretical density after sintering for only 1h at 1400°C.en_US
dc.language.isoenen_US
dc.relation.ispartofJournal of the European Ceramic Societyen_US
dc.titleChemical vapour synthesis of lanthanum gallium oxide nanoparticlesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.doi10.1016/j.jeurceramsoc.2015.05.020-
dc.identifier.scopus2-s2.0-84937514583-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84937514583-
dc.description.versionPublisheden_US
dc.relation.lastpage3552en_US
dc.relation.firstpage3545en_US
dc.relation.issue13en_US
dc.relation.volume35en_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
crisitem.author.deptTehnološki fakultet, Katedra za inženjerstvo materijala-
crisitem.author.deptTehnološki fakultet, Katedra za inženjerstvo materijala-
crisitem.author.orcid0000-0001-6439-5804-
crisitem.author.orcid0000-0003-2499-548X-
crisitem.author.parentorgTehnološki fakultet-
crisitem.author.parentorgTehnološki fakultet-
Appears in Collections:TF Publikacije/Publications
Show simple item record

SCOPUSTM   
Citations

13
checked on May 10, 2024

Page view(s)

39
Last Week
9
Last month
4
checked on May 10, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.