Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/31183
DC Field | Value | Language |
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dc.contributor.author | Cvejić, Željka | en_US |
dc.contributor.author | Rapajić, Sanja | en_US |
dc.contributor.author | Rakić, Srđan | en_US |
dc.contributor.author | Jankov, Stevan | en_US |
dc.contributor.author | Skuban, Sonja | en_US |
dc.contributor.author | Srdić, Vladimir | en_US |
dc.date.accessioned | 2020-12-14T19:36:14Z | - |
dc.date.available | 2020-12-14T19:36:14Z | - |
dc.date.issued | 2015-08-26 | - |
dc.identifier.issn | 00318949 | en_US |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/31183 | - |
dc.description.abstract | © 2015 The Royal Swedish Academy of Sciences. This paper presents the results concerning dielectric behavior and conductivity of the nanosized Zn1-xInxFe2O4 powders (x = 0, 0.15, 0.2, and 0.3), obtained by coprecipitation method. The frequency dependence of dielectric permittivity and conductivity of the samples is determined in the frequency range of 1-105 Hz, at temperatures from 300-350 K, while the temperature dependence of conductivity was recorded at 100 Hz, 10 kHz and 100 kHz. The ac conductivity was found to follow universal dielectric response, which is typical for charge transport by hopping or tunneling processes. Analyzing the variation of the parameter n (as a measure of the degree of correlation between conductivity and frequency), with the temperatures we discuss the possible conduction mechanism in investigated samples. Qualitatively, non-overlapping small polarons (NSPT) are usually associated with increase in n with increasing temperature, while correlated barrier hopping (CBH) shows a decrease in n with increasing T. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP Science | en_US |
dc.relation.ispartof | Physica Scripta | en_US |
dc.source | CRIS UNS | - |
dc.source.uri | http://cris.uns.ac.rs | - |
dc.title | Conductivity and dielectric behaviour of indium substituted zinc ferrites prepared by coprecipitation method | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.doi | 10.1088/0031-8949/90/9/095802 | - |
dc.identifier.doi | (BISIS)96431 | - |
dc.identifier.scopus | 2-s2.0-84940987058 | - |
dc.identifier.url | https://www.cris.uns.ac.rs/record.jsf?recordId=96431&source=BEOPEN&language=en | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/84940987058 | - |
dc.description.version | Published | en_US |
dc.relation.firstpage | 095802 | en_US |
dc.relation.issue | 9 | en_US |
dc.relation.volume | 90 | en_US |
dc.identifier.externalcrisreference | (BISIS)96431 | - |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
crisitem.author.dept | Prirodno-matematički fakultet, Departman za fiziku | - |
crisitem.author.dept | Prirodno-matematički fakultet, Departman za matematiku i informatiku | - |
crisitem.author.dept | Prirodno-matematički fakultet, Departman za fiziku | - |
crisitem.author.dept | Prirodno-matematički fakultet, Departman za fiziku | - |
crisitem.author.dept | Prirodno-matematički fakultet, Departman za fiziku | - |
crisitem.author.dept | Tehnološki fakultet, Katedra za inženjerstvo materijala | - |
crisitem.author.orcid | 0000-0002-8218-4899 | - |
crisitem.author.orcid | 0000-0002-4894-9990 | - |
crisitem.author.orcid | 0000-0002-5118-6154 | - |
crisitem.author.orcid | 0000-0003-2499-548X | - |
crisitem.author.parentorg | Prirodno-matematički fakultet | - |
crisitem.author.parentorg | Prirodno-matematički fakultet | - |
crisitem.author.parentorg | Prirodno-matematički fakultet | - |
crisitem.author.parentorg | Prirodno-matematički fakultet | - |
crisitem.author.parentorg | Prirodno-matematički fakultet | - |
crisitem.author.parentorg | Tehnološki fakultet | - |
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