Resistive switching and synaptic behavior in zirconium doped thin film metal-oxide-metal devices

Abstract

Resistive switching memory devices (also known as memristors or ReRAM) have unique non-linear current-voltage response which allows them to be used for memorizing states and also to perform computational functions. In the last decades, scientific community has invested efforts on the development of cost-effective fabrication techniques for mass production of memristors as well as on research of new applications in the field of sensors, low dissipation memories and as a part of neuromorphic computer architectures. In this paper we study the memristive effect in the thin film metal-oxide-metal structures, with active BaTiO3 film doped with zirconium (Zr). We compare electrical responses of devices with different concentration of Zr, with focus on synaptic response (gradual conductance modification) for potential application as artificial synapses in neuromorphic systems