Dependence of DGMOSFET 1/f noise on transistor geometry and technology parameters

Abstract

In this paper theoretical study of a dual-gate MOSFET (DGMOSFET) 1/f noise and its sensitivity to variation of transistor geometry and technology parameters is presented. Expression for 1/f current noise spectral density Sid(f) is obtained using an ac current approach in a DGMOSFET LF small-signal noise equivalent circuit. The results show 1/f Sid(f) level increase with L1 increase and W decrease. For a single MOS transistor and L increase opposite 1/f noise behaviour is observed. In case of a DGMOSFET, not only transistors noise sources influence overall noise but also dynamic transistors parameters and load resistance RL. Sensitivity of S id(f) to source/drain junction depth xj is minimal as a consequence of " long channel" DGMOSFET structure. As for oxide thickness, 1/f noise level show expected increase with tox increase. © 2006 IEEE.