Please use this identifier to cite or link to this item: https://open.uns.ac.rs/handle/123456789/13626
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dc.contributor.authorNikolić P.en
dc.contributor.authorParaskevopoulos K.en
dc.contributor.authorAleksić O.en
dc.contributor.authorVujatović S.en
dc.contributor.authorVasiljević-Radović D.en
dc.contributor.authorZorba T.en
dc.contributor.authorBlagojević V.en
dc.contributor.authorNikolic N.en
dc.contributor.authorRadovanović M.en
dc.contributor.authorNikolić M.en
dc.date.accessioned2020-03-03T14:53:04Z-
dc.date.available2020-03-03T14:53:04Z-
dc.date.issued2012-03-01en
dc.identifier.issn18426573en
dc.identifier.urihttps://open.uns.ac.rs/handle/123456789/13626-
dc.description.abstractSingle crystal samples of PbTe doped with PbI 2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm -1 with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated.en
dc.relation.ispartofOptoelectronics and Advanced Materials, Rapid Communicationsen
dc.titleFar infrared and photoacoustic characterization of iodine doped PbTeen
dc.typeJournal/Magazine Articleen
dc.identifier.scopus2-s2.0-84861152092en
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84861152092en
dc.relation.lastpage356en
dc.relation.firstpage352en
dc.relation.issue3-4en
dc.relation.volume6en
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:Naučne i umetničke publikacije
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