Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/13626
DC Field | Value | Language |
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dc.contributor.author | Nikolić P. | en |
dc.contributor.author | Paraskevopoulos K. | en |
dc.contributor.author | Aleksić O. | en |
dc.contributor.author | Vujatović S. | en |
dc.contributor.author | Vasiljević-Radović D. | en |
dc.contributor.author | Zorba T. | en |
dc.contributor.author | Blagojević V. | en |
dc.contributor.author | Nikolic N. | en |
dc.contributor.author | Radovanović M. | en |
dc.contributor.author | Nikolić M. | en |
dc.date.accessioned | 2020-03-03T14:53:04Z | - |
dc.date.available | 2020-03-03T14:53:04Z | - |
dc.date.issued | 2012-03-01 | en |
dc.identifier.issn | 18426573 | en |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/13626 | - |
dc.description.abstract | Single crystal samples of PbTe doped with PbI 2 were made using the Bridgman technique. Far infrared reflectivity diagrams of PbTe doped with 0.4 at% and 0.6 at% Iodine were measured and numerically analyzed. A plasma resonance at about 650 cm -1 with the reflectivity minima very close to zero was observed for both samples. Thermal diffusivity was determined for the same samples using the photoacoustic method with a transmission detection configuration and the values of the minority free carrier (holes) mobility were calculated. | en |
dc.relation.ispartof | Optoelectronics and Advanced Materials, Rapid Communications | en |
dc.title | Far infrared and photoacoustic characterization of iodine doped PbTe | en |
dc.type | Journal/Magazine Article | en |
dc.identifier.scopus | 2-s2.0-84861152092 | en |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/84861152092 | en |
dc.relation.lastpage | 356 | en |
dc.relation.firstpage | 352 | en |
dc.relation.issue | 3-4 | en |
dc.relation.volume | 6 | en |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
Appears in Collections: | Naučne i umetničke publikacije |
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