Please use this identifier to cite or link to this item:
https://open.uns.ac.rs/handle/123456789/13462
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Šordan R. | en |
dc.contributor.author | Nikolić K. | en |
dc.date.accessioned | 2020-03-03T14:52:28Z | - |
dc.date.available | 2020-03-03T14:52:28Z | - |
dc.date.issued | 1995-12-01 | en |
dc.identifier.issn | 00036951 | en |
dc.identifier.uri | https://open.uns.ac.rs/handle/123456789/13462 | - |
dc.description.abstract | We present the current-voltage characteristics of a T-shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero-temperature I-V characteristics are with multiple peaks and exhibit regions of negative-differential resistance. The peak-to-valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor. © 1996 American Institute of Physics. | en |
dc.relation.ispartof | Applied Physics Letters | en |
dc.title | The nonlinear transport regime of a T-shaped quantum interference transistor | en |
dc.type | Journal/Magazine Article | en |
dc.identifier.scopus | 2-s2.0-36448999579 | en |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/36448999579 | en |
dc.relation.firstpage | 3599 | en |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
Appears in Collections: | Naučne i umetničke publikacije |
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